PTFA041501GL V1 R250

PTFA041501GL PTFA041501HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz Description The PTFA041501GL and PTFA041501HL are 150-watt LDMOS FETs designed for ultra-linear CDMA power amplifier applications. They are available in thermally-enhanced plastic open-cavity packages with copper flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. • Thermally-enhanced plastic open-cavity (EPOC™) packages with copper flanges, Pb-free and RoHS compliant 45 • Broadband internal matching 40 • Typical CDMA performance at 470 MHz, 28 V - Average output power = 60 W - Linear Gain = 21 dB - Efficiency = 41% • Typical CW performance, 470 MHz, 28 V - Output power at P–1dB = 175 W - Efficiency = 62% • Integrated ESD protection: Human Body Model, Class 1 (minimum) • Excellent thermal stability • Low HCI drift • Capable of handling 10:1 VSWR @ 28 V, 150 W (CW) output power Efficiency –15°C 25°C 90°C -35 -40 35 30 -45 25 -50 20 -55 ACPR 15 -60 10 ALT -65 Drain Efficiency (%) Adjacent Channel Power Ratio (dB) VDD = 28 V, IDQ = 900 mA, ƒ = 470 MHz -30 PTFA041501HL Package PG-64248-2 Features Single-carrier CDMA IS-95 Performance -25 PTFA041501GL Package PG-63248-2 5 -70 -75 0 36 38 40 42 44 46 48 Average Output Power (dBm) RF Characteristics Single-carrier CDMA IS-95 Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 900 mA, POUT = 60 W average, ƒ = 470 MHz Characteristic Symbol Min Typ Max Unit Gain Gps — 21 — dB Drain Efficiency ηD — 41 — % ACPR — –33 — dB Adjacent Channel Power Ratio All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 11 Rev. 02, 2008-11-21 PTFA041501GL PTFA041501HL Confidential, Limited Internal Distribution RF Characteristics (cont.) Two-tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 900 mA, POUT = 150 W PEP, ƒ = 470 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 20.0 21.0 — dB Drain Efficiency ηD 45.0 46.5 — % Intermodulation Distortion IMD — –29 –28 dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 µA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, V GS = 0 V IDSS — — 1.0 µA On-State Resistance VGS = 10 V, V DS = 0.1 V RDS(on) — 0.07 — Ω Operating Gate Voltage VDS = 28 V, IDQ = 900 mA VGS 2 2.48 3 V Gate Leakage Current VGS = 10 V, V DS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PD 625 W 3.57 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 150 W CW, soldered) RθJC 0.28 °C/W Ordering Information Type and Version Package Outline Package Description Shipping Marking PTFA041501GL V1 PG-63248-2 Thermally-enhanced slotted flange, single-ended Tray PTFA041501GL PTFA041501HL V1 PG-64248-2 Thermally-enhanced slotted flange, single-ended Tray PTFA041501HL *See Infineon distributor for future availability. Data Sheet 2 of 11 Rev. 02, 2008-11-21 PTFA041501GL PTFA041501HL Confidential, Limited Internal Distribution Typical Performance (data taken in a production ) POUT, Gain & Efficiency (at P-1dB) vs. Frequency Broadband Circuit Performance VDD = 28 V, IDQ = 900 mA, P–1dB 45 -14 Efficiency 40 -15 35 -16 Return Loss 30 -17 -18 Gain 20 60 55 462 464 466 45 20.5 40 20.4 35 20.3 20.2 30 Gain 20.1 20 15 460 462 Frequency (MHz) 19.9 470 468 Power Sweep, CW Conditions VDD = 28 V, ƒ = 470 MHz VDD = 28 V, IDQ = 900 mA, ƒ = 470 MHz 21.0 20.5 19.5 IDQ = 900 mA 19.0 22 80 21 70 20 IDQ = 1125 mA 20.0 Gain (dB) Gain (dB) 466 Power Sweep at selected IDQ 21.5 60 Gain 19 50 18 40 Efficiency 17 IDQ = 675 mA 18.0 464 Frequency (MHz) 22.0 18.5 20.6 P–1dB 20 -20 470 468 20.7 50 25 -19 15 460 20.8 Efficiency 30 TCASE = 25°C TCASE = 90°C 16 17.5 17.0 20 15 39 41 43 45 47 49 51 53 55 Data Sheet 10 39 Output Power (dBm) Drain Efficiency (%) 25 20.9 Gain (dB) -13 Efficiency (%), P1dB (dBm) 50 65 Input Return Loss (dB) Gain (dB), Efficiency (%) VDD = 28 V, IDQ = 900 mA, P1dB 41 43 45 47 49 51 53 55 Output Power (dBm) 3 of 11 Rev. 02, 2008-11-21 PTFA041501GL PTFA041501HL Confidential, Limited Internal Distribution Typical Performance (cont.) Intermodulation Distortion vs. Pout IM3 vs. Output Power at Selected Biases VDD = 28 V, IDQ = 900 mA, VDD = 28 V , ƒ1 = 469 MHz, ƒ 2 = 470 MHz 0 50 -25 -10 45 -27 40 Efficiency 35 -30 IM3 30 -40 25 IM5 -50 20 -60 IM7 -70 36 38 40 42 44 46 48 675 mA -29 IMD (dBc) -20 Drain Efficiency (%) Intermodulation Distortion (dBc) ƒ 1 = 469 MHz, ƒ 2 = 470 MHz -31 -33 900 mA -35 -37 1125 mA -39 15 -41 10 -43 36 50 38 Output Power (dBm), avg. 42 44 46 48 Bias Voltage vs. Temperature Voltage normalized to typical gate voltage, series show current IDQ = 900 mA, ƒ = 470 MHz 55 0.29 A Normalized Bias Voltage (V) 1.03 54 53 52 51 26 28 30 32 1.47 A 1.01 2.20 A 1.00 4.41 A 0.99 6.61 A 8.81 A 0.98 11.02 A 0.97 0.96 0 20 40 60 80 100 Case Temperature (°C) Supply Voltage (V) Data Sheet 0.88 A 1.02 0.95 -20 50 24 50 Output Power (dBm) Output Power (at 1 dB Compression) vs. Supply Voltage Output Power (dBm) 40 4 of 11 Rev. 02, 2008-11-21 PTFA041501GL PTFA041501HL Confidential, Limited Internal Distribution RD G Broadband Circuit Impedance S T OW A Z Source Ω Frequency Z Load Ω MHz R jX R jX 450 0.88 –3.20 1.33 0.22 455 0.84 –3.20 1.35 0.31 460 0.84 –3.10 1.40 0.38 465 0.84 –3.00 1.41 0.47 470 0.83 –2.90 1.44 0.57 0.2 0.1 0.0 470 MHz 450 MHz Z Source 470 MHz 450 MHz 0.1